AP15P06D Datasheet and Replacement
Type Designator: AP15P06D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.8 nS
Cossⓘ - Output Capacitance: 97.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO252
AP15P06D substitution
AP15P06D Datasheet (PDF)
ap15p06d.pdf
AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS DR
ap15p06df.pdf
AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS DR
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Keywords - AP15P06D MOSFET datasheet
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