AP50N06D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP50N06D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO252

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AP50N06D datasheet

 ..1. Size:2272K  cn apm
ap50n06d.pdf pdf_icon

AP50N06D

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 0.1. Size:3648K  cn apm
ap50n06df.pdf pdf_icon

AP50N06D

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 7.1. Size:2029K  allpower
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AP50N06D

 7.2. Size:2440K  cn apm
ap50n06nf.pdf pdf_icon

AP50N06D

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

Otros transistores... AP4P05MI, AP50G03GD, AP50H06NF, AP50N03AD, AP50N03D, AP50N03DF, AP50N04D, AP50N05D, AON6380, AP50N06NF, AP50N10D, AP50N10P, AP50N20MP, AP80P10D, AP8205A-21, AP8205S, AP85N04NF