AP50N06D Specs and Replacement

Type Designator: AP50N06D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO252

AP50N06D substitution

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AP50N06D datasheet

 ..1. Size:2272K  cn apm
 ap50n06d.pdf pdf_icon

AP50N06D

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

 0.1. Size:3648K  cn apm
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AP50N06D

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

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AP50N06D

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 7.2. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06D

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

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Detailed specifications: AP4P05MI, AP50G03GD, AP50H06NF, AP50N03AD, AP50N03D, AP50N03DF, AP50N04D, AP50N05D, AON6380, AP50N06NF, AP50N10D, AP50N10P, AP50N20MP, AP80P10D, AP8205A-21, AP8205S, AP85N04NF

Keywords - AP50N06D MOSFET specs

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