All MOSFET. AP50N06D Datasheet

 

AP50N06D Datasheet and Replacement


   Type Designator: AP50N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252
 

 AP50N06D substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP50N06D Datasheet (PDF)

 ..1. Size:2272K  cn apm
 ap50n06d.pdf pdf_icon

AP50N06D

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 0.1. Size:3648K  cn apm
 ap50n06df.pdf pdf_icon

AP50N06D

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.1. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06D

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.2. Size:824K  cn apm
 ap50n06p ap50n06t.pdf pdf_icon

AP50N06D

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

SHOW MORE

Datasheet: AP4P05MI , AP50G03GD , AP50H06NF , AP50N03AD , AP50N03D , AP50N03DF , AP50N04D , AP50N05D , AON6380 , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , AP80P10D , AP8205A-21 , AP8205S , AP85N04NF .

Keywords - AP50N06D MOSFET datasheet

 AP50N06D cross reference
 AP50N06D equivalent finder
 AP50N06D lookup
 AP50N06D substitution
 AP50N06D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.