AP50N06D - аналоги и даташиты транзистора

 

AP50N06D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP50N06D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP50N06D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP50N06D Datasheet (PDF)

 ..1. Size:2272K  cn apm
 ap50n06d.pdf pdf_icon

AP50N06D

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 0.1. Size:3648K  cn apm
 ap50n06df.pdf pdf_icon

AP50N06D

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.1. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06D

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.2. Size:824K  cn apm
 ap50n06p ap50n06t.pdf pdf_icon

AP50N06D

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP4P05MI , AP50G03GD , AP50H06NF , AP50N03AD , AP50N03D , AP50N03DF , AP50N04D , AP50N05D , AON6380 , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , AP80P10D , AP8205A-21 , AP8205S , AP85N04NF .

History: AP50H06NF | AP50N03D | AP50N04D | AP9575GM-HF | BSZ042N04NSG | AP15N10Y

 

 
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