AP85N04NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP85N04NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.8 nS
Cossⓘ - Capacitancia de salida: 215 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: PDFN5X6-8L
Búsqueda de reemplazo de AP85N04NF MOSFET
AP85N04NF Datasheet (PDF)
ap85n04nf.pdf
AP85N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP85N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS DR
ap85n03nf.pdf
AP85N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP85N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =85 A DS DR
ap85n08bp ap85n08bt.pdf
AP85N08BPIT 80V N-Channel Enhancement Mode MOSFET Description The AP85N08BP/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =85A DS DR
Otros transistores... AP50N06D , AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , AP80P10D , AP8205A-21 , AP8205S , AO4407 , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S .
History: STM4952 | SML10L100 | NTTFS4928NTAG
History: STM4952 | SML10L100 | NTTFS4928NTAG
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