AP85N04NF Specs and Replacement

Type Designator: AP85N04NF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: PDFN5X6-8L

AP85N04NF substitution

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AP85N04NF datasheet

 ..1. Size:1830K  cn apm
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AP85N04NF

AP85N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP85N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R ... See More ⇒

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AP85N04NF

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AP85N04NF

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AP85N04NF

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Detailed specifications: AP50N06D, AP50N06NF, AP50N10D, AP50N10P, AP50N20MP, AP80P10D, AP8205A-21, AP8205S, AO4407, AP8814A, AP8H04DF, AP8H04S, AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S

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