AP8P04MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP8P04MI

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.8 nS

Cossⓘ - Capacitancia de salida: 108 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: SOT23

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AP8P04MI datasheet

 ..1. Size:1507K  cn apm
 ap8p04mi.pdf pdf_icon

AP8P04MI

AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS D R

 8.1. Size:1717K  cn apm
 ap8p04s.pdf pdf_icon

AP8P04MI

AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R

 9.1. Size:1725K  cn apm
 ap8p06s.pdf pdf_icon

AP8P04MI

AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS D R

Otros transistores... AP8205S, AP85N04NF, AP8814A, AP8H04DF, AP8H04S, AP8H06S, AP8N06SI, AP8N10MI, 5N60, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D, AP16P01BF, AP16P02S