AP8P04MI. Аналоги и основные параметры

Наименование производителя: AP8P04MI

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12.8 ns

Cossⓘ - Выходная емкость: 108 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm

Тип корпуса: SOT23

Аналог (замена) для AP8P04MI

- подборⓘ MOSFET транзистора по параметрам

 

AP8P04MI даташит

 ..1. Size:1507K  cn apm
 ap8p04mi.pdf pdf_icon

AP8P04MI

AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS D R

 8.1. Size:1717K  cn apm
 ap8p04s.pdf pdf_icon

AP8P04MI

AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R

 9.1. Size:1725K  cn apm
 ap8p06s.pdf pdf_icon

AP8P04MI

AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS D R

Другие IGBT... AP8205S, AP85N04NF, AP8814A, AP8H04DF, AP8H04S, AP8H06S, AP8N06SI, AP8N10MI, 5N60, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D, AP16P01BF, AP16P02S