AP8P04MI Datasheet and Replacement. Cross Reference Search

AP8P04MI Datasheet (PDF)

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AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS DR

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AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R

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AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS DR

Datasheet: AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI , AP8N10MI , 10N65 , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , , , , .