AP15P06DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP15P06DF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20.1 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: PDFN3X3-8L

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AP15P06DF datasheet

 ..1. Size:1789K  cn apm
 ap15p06df.pdf pdf_icon

AP15P06DF

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS D R

 6.1. Size:1573K  cn apm
 ap15p06d.pdf pdf_icon

AP15P06DF

AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS D R

 8.1. Size:1544K  1
 ap15p03q.pdf pdf_icon

AP15P06DF

 8.2. Size:1544K  allpower
 ap15p03q.pdf pdf_icon

AP15P06DF

MOSTRAR MÁS

Otros transistores... AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, 20N50, AP15P10D, AP16P01BF, AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P