AP15P06DF Todos los transistores

 

AP15P06DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP15P06DF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20.1 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: PDFN3X3-8L
 

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AP15P06DF Datasheet (PDF)

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AP15P06DF

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS DR

 6.1. Size:1573K  cn apm
 ap15p06d.pdf pdf_icon

AP15P06DF

AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS DR

 8.1. Size:1544K  1
 ap15p03q.pdf pdf_icon

AP15P06DF

 8.2. Size:1544K  allpower
 ap15p03q.pdf pdf_icon

AP15P06DF

MOSTRAR MÁS

Otros transistores... AP8H06S , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , 20N50 , AP15P10D , AP16P01BF , AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P .

History: SWD20N20D

 

 
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