AP15P06DF Specs and Replacement
Type Designator: AP15P06DF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.1 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: PDFN3X3-8L
AP15P06DF substitution
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AP15P06DF datasheet
ap15p06df.pdf
AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS D R ... See More ⇒
ap15p06d.pdf
AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS D R ... See More ⇒
Detailed specifications: AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, 20N50, AP15P10D, AP16P01BF, AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P
Keywords - AP15P06DF MOSFET specs
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