AP15P06DF Specs and Replacement

Type Designator: AP15P06DF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.1 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: PDFN3X3-8L

AP15P06DF substitution

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AP15P06DF datasheet

 ..1. Size:1789K  cn apm
ap15p06df.pdf pdf_icon

AP15P06DF

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS D R ... See More ⇒

 6.1. Size:1573K  cn apm
ap15p06d.pdf pdf_icon

AP15P06DF

AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS D R ... See More ⇒

 8.1. Size:1544K  1
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AP15P06DF

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 8.2. Size:1544K  allpower
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AP15P06DF

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Detailed specifications: AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, 20N50, AP15P10D, AP16P01BF, AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P

Keywords - AP15P06DF MOSFET specs

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