All MOSFET. AP15P06DF Datasheet

 

AP15P06DF Datasheet and Replacement


   Type Designator: AP15P06DF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.1 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: PDFN3X3-8L
 

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AP15P06DF Datasheet (PDF)

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AP15P06DF

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS DR

 6.1. Size:1573K  cn apm
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AP15P06DF

AP15P06D -60V P-Channel Enhancement Mode MOSFET Description The AP15P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-18.8A DS DR

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AP15P06DF

 8.2. Size:1544K  allpower
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AP15P06DF

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Datasheet: AP8H06S , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , 20N50 , AP15P10D , AP16P01BF , AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P .

History: AP6923O | SM3401NSQG

Keywords - AP15P06DF MOSFET datasheet

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