AP15P10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP15P10D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 37 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de AP15P10D MOSFET
AP15P10D Datasheet (PDF)
ap15p10d.pdf
AP15P10D -100V P-Channel Enhancement Mode MOSFET Description The AP15P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-15A DS DR
ap15p10gh-hf ap15p10gj-hf.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount app
ap15p10gh.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology
ap15p10gp ap15p10gs.pdf
AP15P10GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO-263(S)r
Otros transistores... AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF , IRF520 , AP16P01BF , AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I .
History: STD5N62K3
History: STD5N62K3
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