AP15P10D Specs and Replacement

Type Designator: AP15P10D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO252

AP15P10D substitution

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AP15P10D datasheet

 ..1. Size:1464K  cn apm
ap15p10d.pdf pdf_icon

AP15P10D

AP15P10D -100V P-Channel Enhancement Mode MOSFET Description The AP15P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-15A DS D R ... See More ⇒

 7.1. Size:100K  ape
ap15p10gh-hf ap15p10gj-hf.pdf pdf_icon

AP15P10D

AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount app... See More ⇒

 7.2. Size:236K  ape
ap15p10gh.pdf pdf_icon

AP15P10D

AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology ... See More ⇒

 7.3. Size:99K  ape
ap15p10gp ap15p10gs.pdf pdf_icon

AP15P10D

AP15P10GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r... See More ⇒

Detailed specifications: AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, IRF520, AP16P01BF, AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AP1N10I

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