AP16P02S Todos los transistores

 

AP16P02S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP16P02S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 242 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOP8
 

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AP16P02S Datasheet (PDF)

 ..1. Size:1497K  cn apm
 ap16p02s.pdf pdf_icon

AP16P02S

AP16P02S -20V P-Channel Enhancement Mode MOSFET Description The AP16P02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-16A DS DR

 8.1. Size:1331K  cn apm
 ap16p01bf.pdf pdf_icon

AP16P02S

AP16P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP16P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-16A DS DR

Otros transistores... AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF , AP15P10D , AP16P01BF , STF13NM60N , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 .

History: IRF241 | UPA1792G

 

 
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