AP16P02S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP16P02S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 242 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SOP8

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AP16P02S datasheet

 ..1. Size:1497K  cn apm
 ap16p02s.pdf pdf_icon

AP16P02S

AP16P02S -20V P-Channel Enhancement Mode MOSFET Description The AP16P02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-16A DS D R

 8.1. Size:1331K  cn apm
 ap16p01bf.pdf pdf_icon

AP16P02S

AP16P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP16P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-16A DS D R

Otros transistores... AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D, AP16P01BF, STF13NM60N, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AP1N10I, AP200N04NF, AP200N04TLG5