AP16P02S Specs and Replacement

Type Designator: AP16P02S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 242 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

AP16P02S substitution

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AP16P02S datasheet

 ..1. Size:1497K  cn apm
 ap16p02s.pdf pdf_icon

AP16P02S

AP16P02S -20V P-Channel Enhancement Mode MOSFET Description The AP16P02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-16A DS D R ... See More ⇒

 8.1. Size:1331K  cn apm
 ap16p01bf.pdf pdf_icon

AP16P02S

AP16P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP16P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-16A DS D R ... See More ⇒

Detailed specifications: AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D, AP16P01BF, STF13NM60N, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AP1N10I, AP200N04NF, AP200N04TLG5

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