All MOSFET. AP16P02S Datasheet

 

AP16P02S Datasheet and Replacement


   Type Designator: AP16P02S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 242 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

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AP16P02S Datasheet (PDF)

 ..1. Size:1497K  cn apm
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AP16P02S

AP16P02S -20V P-Channel Enhancement Mode MOSFET Description The AP16P02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-16A DS DR

 8.1. Size:1331K  cn apm
 ap16p01bf.pdf pdf_icon

AP16P02S

AP16P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP16P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-16A DS DR

Datasheet: AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF , AP15P10D , AP16P01BF , STF13NM60N , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 .

History: STD5N62K3 | SM3326NHQA | SML20J175 | AP180N04NF | CS12N80F | AP9950AGP | EM8810

Keywords - AP16P02S MOSFET datasheet

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