AP200N04TLG5 Todos los transistores

 

AP200N04TLG5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP200N04TLG5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 1099 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TOLLA-8L
 

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AP200N04TLG5 Datasheet (PDF)

 ..1. Size:1341K  cn apm
 ap200n04tlg5.pdf pdf_icon

AP200N04TLG5

AP200N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP200N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS DR

 6.1. Size:1438K  cn apm
 ap200n04nf.pdf pdf_icon

AP200N04TLG5

AP200N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP200N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS DR

 8.1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N04TLG5

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

 8.2. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N04TLG5

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

MOSTRAR MÁS

Otros transistores... AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , IRF1405 , AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , , , , .

History: AP200N15MP

 

 
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