AP200N04TLG5 Specs and Replacement

Type Designator: AP200N04TLG5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1099 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TOLLA-8L

AP200N04TLG5 substitution

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AP200N04TLG5 datasheet

 ..1. Size:1341K  cn apm
 ap200n04tlg5.pdf pdf_icon

AP200N04TLG5

AP200N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP200N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R ... See More ⇒

 6.1. Size:1742K  allpower
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AP200N04TLG5

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 6.2. Size:1738K  allpower
 ap200n04d.pdf pdf_icon

AP200N04TLG5

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 6.3. Size:1438K  cn apm
 ap200n04nf.pdf pdf_icon

AP200N04TLG5

AP200N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP200N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R ... See More ⇒

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Detailed specifications: AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AP1N10I, AP200N04NF, STP65NF06, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A

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