All MOSFET. AP200N04TLG5 Datasheet

 

AP200N04TLG5 Datasheet and Replacement


   Type Designator: AP200N04TLG5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1099 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TOLLA-8L
 

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AP200N04TLG5 Datasheet (PDF)

 ..1. Size:1341K  cn apm
 ap200n04tlg5.pdf pdf_icon

AP200N04TLG5

AP200N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP200N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS DR

 6.1. Size:1438K  cn apm
 ap200n04nf.pdf pdf_icon

AP200N04TLG5

AP200N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP200N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS DR

 8.1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N04TLG5

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

 8.2. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N04TLG5

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

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Datasheet: AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , STP65NF06 , AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , AP280N10MP , AP2N20MI , AP2N30MI , AP2N7002A .

History: SWD4N60K | SUK3015 | AP15P04D | ET2316 | AP2300AI

Keywords - AP200N04TLG5 MOSFET datasheet

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