AP200N04TLG5 - аналоги и даташиты транзистора

 

AP200N04TLG5 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP200N04TLG5
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 1099 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TOLLA-8L
 

 Аналог (замена) для AP200N04TLG5

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP200N04TLG5 Datasheet (PDF)

 ..1. Size:1341K  cn apm
 ap200n04tlg5.pdf pdf_icon

AP200N04TLG5

AP200N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP200N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS DR

 6.1. Size:1438K  cn apm
 ap200n04nf.pdf pdf_icon

AP200N04TLG5

AP200N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP200N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS DR

 8.1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N04TLG5

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

 8.2. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N04TLG5

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , IRF1405 , AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , , , , .

 

 
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