AP50P03D Todos los transistores

 

AP50P03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50P03D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO252
 

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AP50P03D Datasheet (PDF)

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AP50P03D

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

 0.1. Size:1388K  cn apm
 ap50p03df.pdf pdf_icon

AP50P03D

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS DR

 7.1. Size:1629K  cn apm
 ap50p03nf.pdf pdf_icon

AP50P03D

AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

 8.1. Size:2802K  cn apm
 ap50p02df.pdf pdf_icon

AP50P03D

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D6.8m) R

MOSTRAR MÁS

Otros transistores... AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF , AP30N06D , AP30N06DF , AP30N06Y , AP30N10D , IRFZ44N , AP50P03DF , AP50P03NF , AP50P04D , AP50P04DF , AP50P10D , AP50P10NF , AP50P10P , AP55N10F .

History: NCE3055 | NCE3040Q | MMN3400 | SM3305PSQG | JMSL1010PGD | JMSL1010PGQ | PJS6809

 

 
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