AP50P03D - аналоги и даташиты транзистора

 

AP50P03D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP50P03D
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP50P03D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP50P03D Datasheet (PDF)

 ..1. Size:1281K  cn apm
 ap50p03d.pdf pdf_icon

AP50P03D

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

 0.1. Size:1388K  cn apm
 ap50p03df.pdf pdf_icon

AP50P03D

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS DR

 7.1. Size:1629K  cn apm
 ap50p03nf.pdf pdf_icon

AP50P03D

AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

 8.1. Size:2802K  cn apm
 ap50p02df.pdf pdf_icon

AP50P03D

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D6.8m) R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF , AP30N06D , AP30N06DF , AP30N06Y , AP30N10D , IRFZ44N , AP50P03DF , AP50P03NF , AP50P04D , AP50P04DF , AP50P10D , AP50P10NF , AP50P10P , AP55N10F .

 

 
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