AP50P03D MOSFET Datasheet: P-Ch, 30V, 50A. Full specification with pinout and replacement list

AP50P03D Specs and Replacement

Type Designator: AP50P03D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO252

AP50P03D substitution

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AP50P03D datasheet

..1. Size:1281K cn apm
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AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R ... See More ⇒

0.1. Size:1388K cn apm
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AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS D R ... See More ⇒

7.1. Size:1629K cn apm
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AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R ... See More ⇒

8.1. Size:800K allpower
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