ZXMN3B01F Todos los transistores

 

ZXMN3B01F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN3B01F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.806 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 258 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de ZXMN3B01F MOSFET

   - Selección ⓘ de transistores por parámetros

 

ZXMN3B01F Datasheet (PDF)

 ..1. Size:469K  diodes
 zxmn3b01f.pdf pdf_icon

ZXMN3B01F

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

 ..2. Size:91K  tysemi
 zxmn3b01f.pdf pdf_icon

ZXMN3B01F

Product specificationZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

 0.1. Size:468K  zetex
 zxmn3b01fta.pdf pdf_icon

ZXMN3B01F

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

 7.1. Size:166K  diodes
 zxmn3b04n8.pdf pdf_icon

ZXMN3B01F

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

MOSTRAR MÁS

Otros transistores... ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , 2N7002 , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , ZXMN3F318DN8 , ZXMN3F31DN8 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A .

History: L2N7002DMT1G | S70N06RP | STD60NF3LLT4 | STF34N65M5 | HGP320N20S | SIHFD9110 | TPD60R1K4M

 

 
Back to Top

 


 
.