Справочник MOSFET. ZXMN3B01F

 

ZXMN3B01F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3B01F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.806 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Cossⓘ - Выходная емкость: 258 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для ZXMN3B01F

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMN3B01F Datasheet (PDF)

 ..1. Size:469K  diodes
 zxmn3b01f.pdf pdf_icon

ZXMN3B01F

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

 ..2. Size:91K  tysemi
 zxmn3b01f.pdf pdf_icon

ZXMN3B01F

Product specificationZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

 0.1. Size:468K  zetex
 zxmn3b01fta.pdf pdf_icon

ZXMN3B01F

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

 7.1. Size:166K  diodes
 zxmn3b04n8.pdf pdf_icon

ZXMN3B01F

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , 2N7002 , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , ZXMN3F318DN8 , ZXMN3F31DN8 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A .

History: 2SJ410 | VBFB2317 | TPCP8302 | AP20P02GH | IRF7749L1 | SVF4N60RDM | LS371

 

 
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