ZXMN3B01F MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXMN3B01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.806 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Qgⓘ - Total Gate Charge: 2.93 nC
   Cossⓘ - Output Capacitance: 258 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT23

ZXMN3B01F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS