ZXMN3B01F PDF and Equivalents Search

 

ZXMN3B01F PDF Specs and Replacement


   Type Designator: ZXMN3B01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.806 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics


   Cossⓘ - Output Capacitance: 258 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT23
 

 ZXMN3B01F substitution

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ZXMN3B01F PDF Specs

 ..1. Size:469K  diodes
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ZXMN3B01F

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re... See More ⇒

 ..2. Size:91K  tysemi
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ZXMN3B01F

Product specification ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES ... See More ⇒

 0.1. Size:468K  zetex
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ZXMN3B01F

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re... See More ⇒

 7.1. Size:166K  diodes
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ZXMN3B01F

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low o... See More ⇒

Detailed specifications: ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , MMIS60R580P , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , ZXMN3F318DN8 , ZXMN3F31DN8 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A .

History: SI7454DP

Keywords - ZXMN3B01F MOSFET specs

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 ZXMN3B01F equivalent finder
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