AP20G04NF Todos los transistores

 

AP20G04NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP20G04NF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.8 nS
   Cossⓘ - Capacitancia de salida: 107 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: PDFN5X6-8L
 

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AP20G04NF Datasheet (PDF)

 ..1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G04NF

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS DR

 7.1. Size:2093K  cn apm
 ap20g04gd.pdf pdf_icon

AP20G04NF

AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS DR

 8.1. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G04NF

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS DR

 8.2. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G04NF

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS DR

MOSTRAR MÁS

Otros transistores... AP70N06HD , AP70N12D , AP70N12NF , AP70P02D , AP70P03D , AP70P03DF , AP20G03NF , AP20G04GD , 2N7002 , AP20G06GD , AP20H02S , AP20H03NF , AP20H04NF , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD .

History: PJA3401 | JMTQ120N03D

 

 
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