AP20G04NF Specs and Replacement

Type Designator: AP20G04NF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.8 nS

Cossⓘ - Output Capacitance: 107 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: PDFN5X6-8L

AP20G04NF substitution

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AP20G04NF datasheet

 ..1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G04NF

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS D R ... See More ⇒

 7.1. Size:2093K  cn apm
 ap20g04gd.pdf pdf_icon

AP20G04NF

AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS D R ... See More ⇒

 8.1. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G04NF

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS D R ... See More ⇒

 8.2. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G04NF

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS D R ... See More ⇒

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Detailed specifications: AP70N06HD, AP70N12D, AP70N12NF, AP70P02D, AP70P03D, AP70P03DF, AP20G03NF, AP20G04GD, 2N7002, AP20G06GD, AP20H02S, AP20H03NF, AP20H04NF, AP20N02BF, AP20N02DF, AP20N03D, AP20N06BD

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.