AP20G04NF - аналоги и даташиты транзистора

 

AP20G04NF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP20G04NF
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12.8 ns
   Cossⓘ - Выходная емкость: 107 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: PDFN5X6-8L
 

 Аналог (замена) для AP20G04NF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP20G04NF Datasheet (PDF)

 ..1. Size:2572K  cn apm
 ap20g04nf.pdf pdf_icon

AP20G04NF

AP20G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =23 A DS DR

 7.1. Size:2093K  cn apm
 ap20g04gd.pdf pdf_icon

AP20G04NF

AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS DR

 8.1. Size:1874K  cn apm
 ap20g03nf.pdf pdf_icon

AP20G04NF

AP20G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP20G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =28A DS DR

 8.2. Size:1518K  cn apm
 ap20g06gd.pdf pdf_icon

AP20G04NF

AP20G06GD 60V N+P-Channel Enhancement Mode MOSFET Description The AP20G06GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =23 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP70N06HD , AP70N12D , AP70N12NF , AP70P02D , AP70P03D , AP70P03DF , AP20G03NF , AP20G04GD , 2N7002 , AP20G06GD , AP20H02S , AP20H03NF , AP20H04NF , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD .

History: PJA3401 | JMTQ120N03D

 

 
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