AP20H02S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP20H02S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 238 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de AP20H02S MOSFET
AP20H02S Datasheet (PDF)
ap20h02s.pdf
AP20H02S 20V N+N-Channel Enhancement Mode MOSFET Description The AP20H02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR
ap20h03nf.pdf
AP20H03NF 30V N+N-Channel Enhancement Mode MOSFET Description The AP20H03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =24.7A DS DR
ap20h04nf.pdf
AP20H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP20H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS DR
Otros transistores... AP70N12NF , AP70P02D , AP70P03D , AP70P03DF , AP20G03NF , AP20G04GD , AP20G04NF , AP20G06GD , IRF4905 , AP20H03NF , AP20H04NF , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , AP20N06S .
History: KI005PDFN | WST6008
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