AP20H02S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP20H02S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 238 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: SOP8

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AP20H02S datasheet

 ..1. Size:1511K  cn apm
 ap20h02s.pdf pdf_icon

AP20H02S

AP20H02S 20V N+N-Channel Enhancement Mode MOSFET Description The AP20H02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS D R

 8.1. Size:1317K  cn apm
 ap20h03nf.pdf pdf_icon

AP20H02S

AP20H03NF 30V N+N-Channel Enhancement Mode MOSFET Description The AP20H03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =24.7A DS D R

 8.2. Size:1626K  cn apm
 ap20h04nf.pdf pdf_icon

AP20H02S

AP20H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP20H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS D R

Otros transistores... AP70N12NF, AP70P02D, AP70P03D, AP70P03DF, AP20G03NF, AP20G04GD, AP20G04NF, AP20G06GD, IRF4905, AP20H03NF, AP20H04NF, AP20N02BF, AP20N02DF, AP20N03D, AP20N06BD, AP20N06D, AP20N06S