AP20H02S - аналоги, даташиты, параметры транзистора

AP20H02S Datasheet (PDF)

..1. Size:1511K cn apm
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AP20H02S 20V N+N-Channel Enhancement Mode MOSFET Description The AP20H02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR

8.1. Size:1317K cn apm
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AP20H03NF 30V N+N-Channel Enhancement Mode MOSFET Description The AP20H03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =24.7A DS DR

8.2. Size:1626K cn apm
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AP20H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP20H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS DR

Другие MOSFET... AP70N12NF , AP70P02D , AP70P03D , AP70P03DF , AP20G03NF , AP20G04GD , AP20G04NF , AP20G06GD , IRF4905 , AP20H03NF , AP20H04NF , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , AP20N06S .