AP20H02S Specs and Replacement

Type Designator: AP20H02S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 238 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SOP8

AP20H02S substitution

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AP20H02S datasheet

 ..1. Size:1511K  cn apm
 ap20h02s.pdf pdf_icon

AP20H02S

AP20H02S 20V N+N-Channel Enhancement Mode MOSFET Description The AP20H02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS D R ... See More ⇒

 8.1. Size:1317K  cn apm
 ap20h03nf.pdf pdf_icon

AP20H02S

AP20H03NF 30V N+N-Channel Enhancement Mode MOSFET Description The AP20H03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =24.7A DS D R ... See More ⇒

 8.2. Size:1626K  cn apm
 ap20h04nf.pdf pdf_icon

AP20H02S

AP20H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP20H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS D R ... See More ⇒

Detailed specifications: AP70N12NF, AP70P02D, AP70P03D, AP70P03DF, AP20G03NF, AP20G04GD, AP20G04NF, AP20G06GD, IRF4905, AP20H03NF, AP20H04NF, AP20N02BF, AP20N02DF, AP20N03D, AP20N06BD, AP20N06D, AP20N06S

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