AP3P10MI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3P10MI

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.7 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: SOT23

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AP3P10MI datasheet

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 ap3p10mi.pdf pdf_icon

AP3P10MI

AP3P10MI -100V P-Channel Enhancement Mode MOSFET Description The AP3P10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS D R

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 ap3p10s.pdf pdf_icon

AP3P10MI

AP3P10S -100V P-Channel Enhancement Mode MOSFET Description The AP3P10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS D R

Otros transistores... AP35H04NF, AP3N06I, AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI, IRF1407, AP3P10S, AP40G03NF, AP40H04NF, AP40H10NF, ATM06P50TC, ATM10N10SQ, ATM10N65TF, ATM1205PSI