AP3P10MI Todos los transistores

 

AP3P10MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P10MI
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.7 nS
   Cossⓘ - Capacitancia de salida: 56 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET AP3P10MI

 

AP3P10MI Datasheet (PDF)

 ..1. Size:2096K  cn apm
 ap3p10mi.pdf pdf_icon

AP3P10MI

AP3P10MI -100V P-Channel Enhancement Mode MOSFET Description The AP3P10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS DR

 8.1. Size:1616K  cn apm
 ap3p10s.pdf pdf_icon

AP3P10MI

AP3P10S -100V P-Channel Enhancement Mode MOSFET Description The AP3P10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS DR

Otros transistores... AP35H04NF , AP3N06I , AP3N06MI , AP3N10BI , AP3N50D , AP3P06AI , AP3P06BI , AP3P06LI , IRF1407 , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF , ATM06P50TC , ATM10N10SQ , ATM10N65TF , ATM1205PSI .

History: AP40H04NF | CJAC90SN12

 

 
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