AP3P10MI Datasheet. Specs and Replacement

Type Designator: AP3P10MI

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.7 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOT23

AP3P10MI substitution

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AP3P10MI datasheet

 ..1. Size:2096K  cn apm
 ap3p10mi.pdf pdf_icon

AP3P10MI

AP3P10MI -100V P-Channel Enhancement Mode MOSFET Description The AP3P10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS D R ... See More ⇒

 8.1. Size:1616K  cn apm
 ap3p10s.pdf pdf_icon

AP3P10MI

AP3P10S -100V P-Channel Enhancement Mode MOSFET Description The AP3P10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS D R ... See More ⇒

Detailed specifications: AP35H04NF, AP3N06I, AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI, IRF1407, AP3P10S, AP40G03NF, AP40H04NF, AP40H10NF, ATM06P50TC, ATM10N10SQ, ATM10N65TF, ATM1205PSI

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