All MOSFET. AP3P10MI Datasheet

 

AP3P10MI Datasheet and Replacement


   Type Designator: AP3P10MI
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT23
 

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AP3P10MI Datasheet (PDF)

 ..1. Size:2096K  cn apm
 ap3p10mi.pdf pdf_icon

AP3P10MI

AP3P10MI -100V P-Channel Enhancement Mode MOSFET Description The AP3P10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS DR

 8.1. Size:1616K  cn apm
 ap3p10s.pdf pdf_icon

AP3P10MI

AP3P10S -100V P-Channel Enhancement Mode MOSFET Description The AP3P10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3A DS DR

Datasheet: AP35H04NF , AP3N06I , AP3N06MI , AP3N10BI , AP3N50D , AP3P06AI , AP3P06BI , AP3P06LI , RFP50N06 , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF , ATM06P50TC , ATM10N10SQ , ATM10N65TF , ATM1205PSI .

History: AP40H04NF

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