AP40H04NF Todos los transistores

 

AP40H04NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP40H04NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.6 nS
   Cossⓘ - Capacitancia de salida: 193 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: PDFN5X6-8L

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AP40H04NF Datasheet (PDF)

 ..1. Size:1662K  cn apm
 ap40h04nf.pdf pdf_icon

AP40H04NF

AP40H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP40H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =40A DS DR

 9.1. Size:1188K  cn apm
 ap40h10nf.pdf pdf_icon

AP40H04NF

AP40H10NF 100V N+N-Channel Enhancement Mode MOSFET Description The AP40H10NF uses advanced APM-SGT II technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

Otros transistores... AP3N10BI , AP3N50D , AP3P06AI , AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , 5N60 , AP40H10NF , ATM06P50TC , ATM10N10SQ , ATM10N65TF , ATM1205PSI , ATM2300NSA , ATM2301PSC , ATM2302NSA .

 

 
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