AP40H04NF Datasheet. Specs and Replacement

Type Designator: AP40H04NF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: PDFN5X6-8L

AP40H04NF substitution

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AP40H04NF datasheet

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AP40H04NF

AP40H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP40H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =40A DS D R ... See More ⇒

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AP40H04NF

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Detailed specifications: AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI, AP3P10MI, AP3P10S, AP40G03NF, 5N60, AP40H10NF, ATM06P50TC, ATM10N10SQ, ATM10N65TF, ATM1205PSI, ATM2300NSA, ATM2301PSC, ATM2302NSA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.