ATM10N10SQ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATM10N10SQ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21.6 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: SOT89

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ATM10N10SQ datasheet

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ATM10N10SQ

ATM10N10SQ N-Channel Fast Switching MOSFETs Drain-Source Voltage 100V Drain Current 10A SOT-89 Description The ATM10N10SQ is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small p ower switching and load switch applications. The ATM10N10SQ meets the RoHS and Green Product requirement with full function reliability approved.

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ATM10N10SQ

ATM10N65TF N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 650V Drain Current 10A DESCRIPTION The ATM10N65TF is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in h

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