All MOSFET. ATM10N10SQ Datasheet

 

ATM10N10SQ Datasheet and Replacement


   Type Designator: ATM10N10SQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOT89
 

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ATM10N10SQ Datasheet (PDF)

 ..1. Size:340K  agertech
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ATM10N10SQ

ATM10N10SQN-Channel Fast Switching MOSFETsDrain-Source Voltage: 100V Drain Current:10ASOT-89DescriptionThe ATM10N10SQ is the high cell density trenched N-ch MOSFETs,which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ATM10N10SQ meets the RoHS and Green Product requirementwith full function reliability approved.

 8.1. Size:694K  agertech
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ATM10N10SQ

ATM10N65TFN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 650V Drain Current: 10ADESCRIPTIONThe ATM10N65TF is a high voltage power MOSFET combines advancedtrench MOSFET designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and high ruggedavalanche characteristics. This power MOSFET is usually used in h

Datasheet: AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF , ATM06P50TC , 4N60 , ATM10N65TF , ATM1205PSI , ATM2300NSA , ATM2301PSC , ATM2302NSA , ATM2305PSA , ATM2310NSA , ATM2320KNSA .

Keywords - ATM10N10SQ MOSFET datasheet

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