ATM10N65TF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATM10N65TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 124 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de ATM10N65TF MOSFET

- Selecciónⓘ de transistores por parámetros

 

ATM10N65TF datasheet

 ..1. Size:694K  agertech
 atm10n65tf.pdf pdf_icon

ATM10N65TF

ATM10N65TF N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 650V Drain Current 10A DESCRIPTION The ATM10N65TF is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in h

 8.1. Size:340K  agertech
 atm10n10sq.pdf pdf_icon

ATM10N65TF

ATM10N10SQ N-Channel Fast Switching MOSFETs Drain-Source Voltage 100V Drain Current 10A SOT-89 Description The ATM10N10SQ is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small p ower switching and load switch applications. The ATM10N10SQ meets the RoHS and Green Product requirement with full function reliability approved.

Otros transistores... AP3P06LI, AP3P10MI, AP3P10S, AP40G03NF, AP40H04NF, AP40H10NF, ATM06P50TC, ATM10N10SQ, 18N50, ATM1205PSI, ATM2300NSA, ATM2301PSC, ATM2302NSA, ATM2305PSA, ATM2310NSA, ATM2320KNSA, AP4959A