ATM10N65TF Datasheet. Specs and Replacement

Type Designator: ATM10N65TF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

ATM10N65TF substitution

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ATM10N65TF datasheet

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ATM10N65TF

ATM10N65TF N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 650V Drain Current 10A DESCRIPTION The ATM10N65TF is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in h... See More ⇒

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ATM10N65TF

ATM10N10SQ N-Channel Fast Switching MOSFETs Drain-Source Voltage 100V Drain Current 10A SOT-89 Description The ATM10N10SQ is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small p ower switching and load switch applications. The ATM10N10SQ meets the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

Detailed specifications: AP3P06LI, AP3P10MI, AP3P10S, AP40G03NF, AP40H04NF, AP40H10NF, ATM06P50TC, ATM10N10SQ, 18N50, ATM1205PSI, ATM2300NSA, ATM2301PSC, ATM2302NSA, ATM2305PSA, ATM2310NSA, ATM2320KNSA, AP4959A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.