All MOSFET. ATM10N65TF Datasheet

 

ATM10N65TF Datasheet and Replacement


   Type Designator: ATM10N65TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F

 ATM10N65TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATM10N65TF Datasheet (PDF)

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ATM10N65TF

ATM10N65TFN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 650V Drain Current: 10ADESCRIPTIONThe ATM10N65TF is a high voltage power MOSFET combines advancedtrench MOSFET designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and high ruggedavalanche characteristics. This power MOSFET is usually used in h

 8.1. Size:340K  agertech
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ATM10N65TF

ATM10N10SQN-Channel Fast Switching MOSFETsDrain-Source Voltage: 100V Drain Current:10ASOT-89DescriptionThe ATM10N10SQ is the high cell density trenched N-ch MOSFETs,which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ATM10N10SQ meets the RoHS and Green Product requirementwith full function reliability approved.

Datasheet: AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF , ATM06P50TC , ATM10N10SQ , 18N50 , ATM1205PSI , ATM2300NSA , ATM2301PSC , ATM2302NSA , ATM2305PSA , ATM2310NSA , ATM2320KNSA , AP4959A .

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