AP5N50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP5N50D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 54.2 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: TO252
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AP5N50D Datasheet (PDF)
ap5n50d.pdf
AP5N50D 500V N-Channel Enhancement Mode MOSFE Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General
ap5n50f ap5n50p ap5n50t.pdf
AP5N50FIPIT 500V N-Channel Enhancement Mode MOSFET Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge
ap5n50bd.pdf
AP5N50BD 500V N-Channel Enhancement Mode MOSFET Description The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gene
Otros transistores... AP4435B , AP45P06D , AP45P06NF , AP4606C , AP4953A , AP4953B , AP5N40D , AP5N50BD , IRF630 , , , , , , , , .
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