AP5N50D Datasheet and Replacement
Type Designator: AP5N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 54.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
AP5N50D substitution
AP5N50D Datasheet (PDF)
ap5n50d.pdf
AP5N50D 500V N-Channel Enhancement Mode MOSFE Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General
ap5n50f ap5n50p ap5n50t.pdf
AP5N50FIPIT 500V N-Channel Enhancement Mode MOSFET Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge
ap5n50bd.pdf
AP5N50BD 500V N-Channel Enhancement Mode MOSFET Description The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gene
Datasheet: AP4435B , AP45P06D , AP45P06NF , AP4606C , AP4953A , AP4953B , AP5N40D , AP5N50BD , IRF630 , , , , , , , , .
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