AP5N50D Datasheet. Specs and Replacement
Type Designator: AP5N50D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 54.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
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AP5N50D datasheet
ap5n50d.pdf
AP5N50D 500V N-Channel Enhancement Mode MOSFE Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General... See More ⇒
ap5n50f ap5n50p ap5n50t.pdf
AP5N50FIPIT 500V N-Channel Enhancement Mode MOSFET Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒
Detailed specifications: AP4435B, AP45P06D, AP45P06NF, AP4606C, AP4953A, AP4953B, AP5N40D, AP5N50BD, 8205A, ATM3407PSA, ATM3415KPSA, ATM6402NSA, ATM7414NDH, ATM7N65ATE, ATM8205DNPD, ATM8205DNSG, ATM9435PPA
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