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AP5N50D Spec and Replacement


   Type Designator: AP5N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 54.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO252

 AP5N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP5N50D Specs

 ..1. Size:1600K  cn apm
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AP5N50D

AP5N50D 500V N-Channel Enhancement Mode MOSFE Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General... See More ⇒

 8.1. Size:841K  allpower
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AP5N50D

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 8.2. Size:789K  allpower
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AP5N50D

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 8.3. Size:1440K  cn apm
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AP5N50D

AP5N50FIPIT 500V N-Channel Enhancement Mode MOSFET Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒

Detailed specifications: AP4435B , AP45P06D , AP45P06NF , AP4606C , AP4953A , AP4953B , AP5N40D , AP5N50BD , 8205A , ATM3407PSA , ATM3415KPSA , ATM6402NSA , ATM7414NDH , ATM7N65ATE , ATM8205DNPD , ATM8205DNSG , ATM9435PPA .

Keywords - AP5N50D MOSFET specs

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