AP6G03LI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6G03LI  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT23-6L

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AP6G03LI datasheet

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AP6G03LI

AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.8A DS D R

 8.1. Size:2445K  cn apm
 ap6g03s.pdf pdf_icon

AP6G03LI

AP6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10 A DS D R

 9.1. Size:3407K  cn apm
 ap6g04s.pdf pdf_icon

AP6G03LI

AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS D R

Otros transistores... ATM9435PPA, AP60P03D, AP65N03DF, AP65N04DF, AP65N06NF, AP68N04DF, AP68N04NF, AP6946A, SPP20N60C3, AP260N12TLG1, AP30N10Y, AP30N15D, AP30N20P, AP30P01DF, AP30P02DF, AP30P03D, AP40N02D