All MOSFET. AP6G03LI Datasheet

 

AP6G03LI Datasheet and Replacement


   Type Designator: AP6G03LI
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT23-6L
 

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AP6G03LI Datasheet (PDF)

 ..1. Size:1723K  cn apm
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AP6G03LI

AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.8A DS DR

 8.1. Size:2445K  cn apm
 ap6g03s.pdf pdf_icon

AP6G03LI

AP6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10 A DS DR

 9.1. Size:3407K  cn apm
 ap6g04s.pdf pdf_icon

AP6G03LI

AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS DR

Datasheet: ATM9435PPA , AP60P03D , AP65N03DF , AP65N04DF , AP65N06NF , AP68N04DF , AP68N04NF , AP6946A , IRF9540N , , , , , , , , .

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