AP30P02DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30P02DF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 24 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 242 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: PDFN3X3-8L

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AP30P02DF datasheet

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AP30P02DF

AP30P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP30P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-30A DS D R

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AP30P02DF

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AP30P02DF

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AP30P02DF

AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS D R

MOSTRAR MÁS

Otros transistores... AP68N04NF, AP6946A, AP6G03LI, AP260N12TLG1, AP30N10Y, AP30N15D, AP30N20P, AP30P01DF, 5N65, AP30P03D, AP40N02D, AP40N03S, AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, AP40P04D