AP5P06MSI Todos los transistores

 

AP5P06MSI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP5P06MSI
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de MOSFET AP5P06MSI

 

Principales características: AP5P06MSI

 ..1. Size:1402K  cn apm
 ap5p06msi.pdf pdf_icon

AP5P06MSI

AP5P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP5P06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-5A DS D R

 9.1. Size:1491K  cn apm
 ap5p04mi.pdf pdf_icon

AP5P06MSI

AP5P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP5P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-5.0A DS D R

Otros transistores... AP40N10P , AP40N20MP , AP40P02D , AP40P03DF , AP40P04D , AP40P04DF , AP40P04NF , AP5P04MI , BS170 , AP60N02D , AP60N02DF , AP60N02NF , AP60N03D , AP60N03DF , AP60N03NF , AP60N03Y , AP60N04D .

History: UPA2734GR

 

 
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