AP5P06MSI Datasheet. Specs and Replacement

Type Designator: AP5P06MSI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: SOT223

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AP5P06MSI datasheet

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AP5P06MSI

AP5P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP5P06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-5A DS D R ... See More ⇒

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AP5P06MSI

AP5P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP5P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-5.0A DS D R ... See More ⇒

Detailed specifications: AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, AP40P04D, AP40P04DF, AP40P04NF, AP5P04MI, BS170, AP60N02D, AP60N02DF, AP60N02NF, AP60N03D, AP60N03DF, AP60N03NF, AP60N03Y, AP60N04D

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