AGM30P35M Todos los transistores

 

AGM30P35M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM30P35M
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 70.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
   Paquete / Cubierta: SOP8
 

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AGM30P35M datasheet

 ..1. Size:1239K  cn agmsemi
 agm30p35m.pdf pdf_icon

AGM30P35M

AGM30P35M General Description Product Summary The AGM30P35M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 33m -5.4A protection applications. Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimize conduct

 6.1. Size:1276K  cn agmsemi
 agm30p35s.pdf pdf_icon

AGM30P35M

AGM30P35S General Description Product Summary The AGM30P35S combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -6A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology R to minimize conduct

 6.2. Size:1266K  cn agmsemi
 agm30p35ap.pdf pdf_icon

AGM30P35M

AGM30P35AP General Description Product Summary The AGM30P35AP combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -16A protection applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology R to minimi

 6.3. Size:1193K  cn agmsemi
 agm30p35d.pdf pdf_icon

AGM30P35M

AGM30P35D General Description Product Summary The AGM30P35D combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 36.5m -20A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology R to minimize cond

MOSTRAR MÁS

Otros transistores... AGM30P25AP , AGM30P25D , AGM30P25M , AGM30P25MBP , AGM30P25MBQ , AGM30P25S , AGM30P35AP , AGM30P35D , MMIS60R580P , AGM30P35S , AGM30P55A , AGM30P55D , AGM30P55D1 , AGM30P85D , AGM015N10LL , AGM01P15AP , AGM01P15D .

History: D7N60 | IRLL024N | SFB043N150C3 | TK12A50D | BRCS150N12SZC | AOD438 | PJP5NA50

 

 
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