All MOSFET. AGM30P35M Datasheet

 

AGM30P35M Datasheet and Replacement


   Type Designator: AGM30P35M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOP8
 

 AGM30P35M substitution

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AGM30P35M Datasheet (PDF)

 ..1. Size:1239K  cn agmsemi
 agm30p35m.pdf pdf_icon

AGM30P35M

AGM30P35M General DescriptionProduct SummaryThe AGM30P35M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 33m -5.4Aprotection applications. FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to minimize conduct

 6.1. Size:1276K  cn agmsemi
 agm30p35s.pdf pdf_icon

AGM30P35M

AGM30P35S General DescriptionProduct SummaryThe AGM30P35S combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -6Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyR to minimize conduct

 6.2. Size:1266K  cn agmsemi
 agm30p35ap.pdf pdf_icon

AGM30P35M

AGM30P35AP General DescriptionProduct SummaryThe AGM30P35AP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -16Aprotection applications.PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technologyR to minimi

 6.3. Size:1193K  cn agmsemi
 agm30p35d.pdf pdf_icon

AGM30P35M

AGM30P35D General DescriptionProduct SummaryThe AGM30P35D combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 36.5m -20Aprotection applications.TO-252 Pin Configuration Features Advance high cell density Trench technologyR to minimize cond

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Datasheet: AGM30P25AP , AGM30P25D , AGM30P25M , AGM30P25MBP , AGM30P25MBQ , AGM30P25S , AGM30P35AP , AGM30P35D , STP65NF06 , AGM30P35S , AGM30P55A , AGM30P55D , AGM30P55D1 , AGM30P85D , , , .

History: AGM30P55D

Keywords - AGM30P35M MOSFET datasheet

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