AGM30P35M Datasheet. Specs and Replacement

Type Designator: AGM30P35M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 70.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: SOP8

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AGM30P35M substitution

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AGM30P35M datasheet

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AGM30P35M

AGM30P35M General Description Product Summary The AGM30P35M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 33m -5.4A protection applications. Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimize conduct... See More ⇒

 6.1. Size:1276K  cn agmsemi
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AGM30P35M

AGM30P35S General Description Product Summary The AGM30P35S combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -6A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology R to minimize conduct... See More ⇒

 6.2. Size:1266K  cn agmsemi
 agm30p35ap.pdf pdf_icon

AGM30P35M

AGM30P35AP General Description Product Summary The AGM30P35AP combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -16A protection applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology R to minimi... See More ⇒

 6.3. Size:1193K  cn agmsemi
 agm30p35d.pdf pdf_icon

AGM30P35M

AGM30P35D General Description Product Summary The AGM30P35D combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 36.5m -20A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology R to minimize cond... See More ⇒

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Detailed specifications: AGM30P25AP, AGM30P25D, AGM30P25M, AGM30P25MBP, AGM30P25MBQ, AGM30P25S, AGM30P35AP, AGM30P35D, IRFB3206, AGM30P35S, AGM30P55A, AGM30P55D, AGM30P55D1, AGM30P85D, AGM015N10LL, AGM01P15AP, AGM01P15D

Keywords - AGM30P35M MOSFET specs

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