AGM042N10D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM042N10D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 898 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de AGM042N10D MOSFET
AGM042N10D datasheet
agm042n10d.pdf
AGM042N10D Silicon N-Channel MOSFET Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM042
agm042n10a.pdf
AGM042N10A VDS ,Drain to Source Voltage (V) T , Junction Temperature ( ) J Fig.1 Typical Output Characteristics Fig.2 Normalized RDSON vs. T J T , Junction Temperature ( ) Qg , Gate Charge (nC) J Fig.3 Normalized V vs. T Fig.4 Gate Charge Waveform th J I , Continuous Drain Current (A) V , Gate to Source Voltage (V) D GS Fig.5 Turn-On Resistance vs. ID Fig.6 Turn-On Resistan
Otros transistores... AGM1075S , AGM1095MAP , AGM1095MN , AGM1099D , AGM1099E , AGM1099EY , AGM1099S , AGM10N15D , AON7408 , AGM056N08C , AGM056N10A , AGM056N10C , AGM056N10H , AGM065N10C , AGM065N10D , AGM085N10C , AGM085N10C1 .
History: MS34N34 | PJP5NA50 | D7N60 | AGM30P35M | AOD438 | AGM30P55D | SVT035R5NL5
History: MS34N34 | PJP5NA50 | D7N60 | AGM30P35M | AOD438 | AGM30P55D | SVT035R5NL5
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