AGM042N10D Datasheet. Specs and Replacement

Type Designator: AGM042N10D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 898 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

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AGM042N10D datasheet

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AGM042N10D

AGM042N10D Silicon N-Channel MOSFET Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM042... See More ⇒

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AGM042N10D

AGM042N10A VDS ,Drain to Source Voltage (V) T , Junction Temperature ( ) J Fig.1 Typical Output Characteristics Fig.2 Normalized RDSON vs. T J T , Junction Temperature ( ) Qg , Gate Charge (nC) J Fig.3 Normalized V vs. T Fig.4 Gate Charge Waveform th J I , Continuous Drain Current (A) V , Gate to Source Voltage (V) D GS Fig.5 Turn-On Resistance vs. ID Fig.6 Turn-On Resistan... See More ⇒

Detailed specifications: AGM1075S, AGM1095MAP, AGM1095MN, AGM1099D, AGM1099E, AGM1099EY, AGM1099S, AGM10N15D, 2N7000, AGM056N08C, AGM056N10A, AGM056N10C, AGM056N10H, AGM065N10C, AGM065N10D, AGM085N10C, AGM085N10C1

Keywords - AGM042N10D MOSFET specs

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