AGM042N10D MOSFET Datasheet: N-Ch, 100V, 110A. Full specification with pinout and replacement list

AGM042N10D Specs and Replacement

   Type Designator: AGM042N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252

AGM042N10D substitution

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AGM042N10D datasheet

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AGM042N10D Silicon N-Channel MOSFET Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM042... See More ⇒

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AGM042N10A VDS ,Drain to Source Voltage (V) T , Junction Temperature ( ) J Fig.1 Typical Output Characteristics Fig.2 Normalized RDSON vs. T J T , Junction Temperature ( ) Qg , Gate Charge (nC) J Fig.3 Normalized V vs. T Fig.4 Gate Charge Waveform th J I , Continuous Drain Current (A) V , Gate to Source Voltage (V) D GS Fig.5 Turn-On Resistance vs. ID Fig.6 Turn-On Resistan... See More ⇒

Detailed specifications: AGM1075S , AGM1095MAP , AGM1095MN , AGM1099D , AGM1099E , AGM1099EY , AGM1099S , AGM10N15D , AON7408 , AGM056N08C , AGM056N10A , AGM056N10C , AGM056N10H , AGM065N10C , AGM065N10D , AGM085N10C , AGM085N10C1 .