AGM056N10H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM056N10H  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 1290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm

Encapsulados: TO263

  📄📄 Copiar 

 Búsqueda de reemplazo de AGM056N10H MOSFET

- Selecciónⓘ de transistores por parámetros

 

AGM056N10H datasheet

 ..1. Size:1590K  cn agmsemi
 agm056n10h.pdf pdf_icon

AGM056N10H

AGM056N10H General Description The AGM056N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.1m 140A Advance high cell density Trench technology TO-263 Pin Configuration Low R to

 5.1. Size:1787K  cn agmsemi
 agm056n10c.pdf pdf_icon

AGM056N10H

AGM056N10C General Description Product Summary The AGM056N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 5.4m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

 5.2. Size:1500K  cn agmsemi
 agm056n10a.pdf pdf_icon

AGM056N10H

AGM056N10A General Description The AGM056N10A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery protection applications. BVDSS RDSON ID Features 100V 4.7m 100A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to

 7.1. Size:786K  cn agmsemi
 agm056n08c.pdf pdf_icon

AGM056N10H

AGM056N08C General Description Product Summary The AGM056N08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 4.4m 120A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

MOSTRAR MÁS

Otros transistores... AGM1099E, AGM1099EY, AGM1099S, AGM10N15D, AGM042N10D, AGM056N08C, AGM056N10A, AGM056N10C, IRF1010E, AGM065N10C, AGM065N10D, AGM085N10C, AGM085N10C1, AGM085N10F, AGM08T15C, AGM1010A2, AGM1010A-E